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产品信息
CT Micro 高速光耦 CT 6N136
CT Micro 高速光耦 CT 6N136
高速光耦一般应用在电源上，具体应用在放点等离子，固态继电器，工业测量机，调制器，电话，空调控制板，可编程逻辑控制器等等。
CT Micro 高速光耦 CT 6N136
CT Micro 高速光耦 CT 6N136
Features
•High speed 1MBit/s
•High isolation voltage between input and output
(Viso=5000 Vrms )
•Guaranteed CTR performance from 0°C to 70°C
•Wide operating temperature range of -55°C to
100°C
•Regulatory Approvals
UL - UL1577 (E364000)
VDE - EN60747-5-5(VDE0884-5)
CQC – GB4943.1, GB8898
IEC60065, IEC60950
Description
The 6N135, 6N136, CT4502 and CT4503 devices
each consist of an infrared emitting diode, optically
coupled to a high speed photo detector transistor. A
separate connection for the photodiode bias and
output-transistor collector increase the speed by
several orders of magnitude over conventional
phototransistor couplers by reducing the
base-collector capacitance of the input transistor.
The devices are packaged in an 8-pin DIP package
and also available in gullwing (400mil) and surface
mount lead forming.
Applications
•Line receivers
•Telecommunication equipment
•High speed logic ground isolation
•Feedback loop in switch-mode power supplies
•Home appliances
CT Micro 高速光耦 CT 6N136
